PBN Products

Submitted by drupaladmin on Sat, 2008-03-01 00:26.

PBN Crucibles for VGF

Available from 2" in diameter to 6" in diameter

Height from 7" to 10"

 

PBN Crucibles for LEC

Available from 3" in diameter to 8" in diameter

( categories: Products )

n- and p-type Ge

Submitted by drupaladmin on Sat, 2008-03-01 00:25.

Semi-conducting Ge Specifications



Growth Method VGF
Dopant n-type: As; p-type: Ga
Wafer Shape Round (DIA: 2" TO 6")
Surface Orientation** (100)±0.5°

**Other Orientations maybe available upon request

( categories: Products )

Gallium Metal

Submitted by drupaladmin on Sat, 2008-03-01 00:22.


Purity Levels
4N 6N 7N MBE Grade - 8N
99.99% 99.9999% 99.99999% 99.999999% Plus


Total Impurities
<50ppm <500ppb <50ppb <10ppb


Critical Elements
Cu <10ppm <0.5ppb <0.5ppb <0.5ppb
Zn <5ppm <3.0ppb <1.0ppb <1.0ppb
Cd <5ppm <0.5ppb <0.5ppb <0.5ppb
Si <2ppm <1.0ppb <0.5ppb <0.5ppb
Fe <5ppm <0.1ppb <0.1ppb <0.1ppb
Al <5ppm <0.2ppb <0.2ppb <0.2ppb
Ca <5ppm <5ppb <5.0ppb <5.0ppb
Na <5ppm <0.2ppb <0.2ppb <0.2ppb
Pb <10ppm <0.5ppb <0.5ppb <0.5ppb
In <10ppm <1.0ppb <0.5ppb <0.5ppb

Analysis Method: Glow Discharge Mass Spectroscopy (GDMS)

( categories: Products )

Undoped GaAs

Submitted by drupaladmin on Sat, 2008-03-01 00:20.

Semi-Insulating GaAs Specifications



Growth Method VGF
Dopant Carbon
Wafer Shape* Round (DIA: 2", 3", 4", and 6")
Surface Orientation** (100)±0.5°

*5" Wafers available upon request

( categories: Products )

n- and p-type GaAs

Submitted by drupaladmin on Sat, 2008-03-01 00:16.

Semi-conducting GaAs Specifications



Growth Method VGF
Dopant Si (n-type) AND Zn (p-type)
Wafer Shape Round (DIA: 2", 3", 4" and 6")
Surface Orientation* (100)±0.5°

*Other Orientations maybe available upon request

( categories: Products )

n- and p-type InP

Submitted by drupaladmin on Sat, 2008-03-01 00:11.

Semi-conducting InP Specifications



Growth Method VGF
Dopant n-type: S, Sn AND Undoped; p-type: Zn
Wafer Shape Round (DIA: 2", 3", AND 4")
Surface Orientation (100)±0.5°

*Other Orientations maybe available upon request

( categories: Products )

Fe Doped InP

Submitted by drupaladmin on Fri, 2008-02-29 20:10.

 

Semi-Insulating InP Specifications



Growth Method VGF
Dopant Iron (FE)
Wafer Shape Round (DIA: 2", 3", AND 4")
Surface Orientation (100)±0.5°

*Other Orientations maybe available upon request

( categories: Products )

Product Specifications

Submitted by drupaladmin on Fri, 2008-02-15 18:56.


Raw Material
-- PBN

--

Gallium Metal


GaAs Substrates
-- GaAs SI
-- GaAs SC


InP Substrates
-- InP SI
-- InP SC

Ge Substrates

--

( categories: Products )

AXT Presentation

Submitted by drupaladmin on Fri, 2007-01-12 18:58.

( categories: Media )

AXT Video

Submitted by drupaladmin on Mon, 2006-08-07 21:43.

( categories: Media )