n- and p-type InP

Submitted by drupaladmin on Sat, 2008-03-01 00:11.

Semi-conducting InP Specifications



Growth Method VGF
Dopant n-type: S, Sn AND Undoped; p-type: Zn
Wafer Shape Round (DIA: 2", 3", AND 4")
Surface Orientation (100)±0.5°

*Other Orientations maybe available upon request

 



Dopant S & Sn (n-type) Undoped (n-type) Zn (p-type)
Carrier Concentration (cm-3) ( 0.8-8) × 1018 ( 1-10) × 1015 ( 0.8-8) × 1018
Mobility (cm2/V.S.) ( 1-2.5) × 103 ( 3-5) × 103 50-100
Etch Pitch Density (cm2) 100-5,000 5000 500

 



Wafer Diameter (mm) 50.8±0.3 76.2±0.3 100±0.3
Thickness (µm) 350±25 625±25 625±25
TTV [P/P] (µm) 10 10 10
TTV [P/E] (µm) 10 15 15
WARP (µm) 15 15 15
OF (mm) 17±1 22±1 32.5±1
OF / IF (mm) 7±1 12±1 18±1
Polish* E/E, P/E, P/P E/E, P/E, P/P E/E, P/E, P/P

*E=Etched, P=Polished

Note: Other Specifications maybe available upon request

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