n- and p-type InP
Submitted by drupaladmin on Sat, 2008-03-01 00:11.
Semi-conducting InP Specifications
| Growth Method |
VGF |
| Dopant |
n-type: S, Sn AND Undoped; p-type: Zn |
| Wafer Shape |
Round (DIA: 2", 3", AND 4") |
| Surface Orientation |
(100)±0.5° |
*Other Orientations maybe available upon request
| Dopant |
S & Sn (n-type) |
Undoped (n-type) |
Zn (p-type) |
| Carrier Concentration (cm-3) |
( 0.8-8) × 1018 |
( 1-10) × 1015 |
( 0.8-8) × 1018 |
| Mobility (cm2/V.S.) |
( 1-2.5) × 103 |
( 3-5) × 103 |
50-100 |
| Etch Pitch Density (cm2) |
100-5,000 |
≤ 5000 |
≤ 500 |
| Wafer Diameter (mm) |
50.8±0.3 |
76.2±0.3 |
100±0.3 |
| Thickness (µm) |
350±25 |
625±25 |
625±25 |
| TTV [P/P] (µm) |
≤ 10 |
≤ 10 |
≤ 10 |
| TTV [P/E] (µm) |
≤ 10 |
≤ 15 |
≤ 15 |
| WARP (µm) |
≤ 15 |
≤ 15 |
≤ 15 |
| OF (mm) |
17±1 |
22±1 |
32.5±1 |
| OF / IF (mm) |
7±1 |
12±1 |
18±1 |
| Polish* |
E/E, P/E, P/P |
E/E, P/E, P/P |
E/E, P/E, P/P |
*E=Etched, P=Polished
Note: Other Specifications maybe available upon request
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