n- and p-type Ge

Submitted by drupaladmin on Sat, 2008-03-01 00:25.

Semi-conducting Ge Specifications



Growth Method VGF
Dopant n-type: As; p-type: Ga
Wafer Shape Round (DIA: 2" TO 6")
Surface Orientation** (100)±0.5°

**Other Orientations maybe available upon request

 



Dopant As (n-type) Ga (p-type)
Resistivity  (Ω.cm) 0.05-0.25 0.005-0.04
Etch Pitch Density (cm2) 300 300

 



Wafer Diameter (mm) 50.8±0.3 100±0.3
Thickness (µm) 175±25 175±25
TTV [P/P] (µm) 15 15
WARP (µm) 25 25
IF* (mm) 17±1 32.5±1
OF (mm) 7±1 18±1
Polish** E/E, P/E, P/G E/E, P/E, P/G
Backside Ra (µm)*** < 0.1 < 0.1

*If needed by customer

**E=Etched, P=Polished, G=Ground

***Ra=Average Service Roughness

3" AND 6" wafers available upon request

Note: Other Specifications maybe available upon request

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