n- and p-type Ge
Submitted by drupaladmin on Sat, 2008-03-01 00:25.
Semi-conducting Ge Specifications
| Growth Method |
VGF |
| Dopant |
n-type: As; p-type: Ga |
| Wafer Shape |
Round (DIA: 2" TO 6") |
| Surface Orientation** |
(100)±0.5° |
**Other Orientations maybe available upon request
| Dopant |
As (n-type) |
Ga (p-type) |
| Resistivity (Ω.cm) |
0.05-0.25 |
0.005-0.04 |
| Etch Pitch Density (cm2) |
≤ 300 |
≤ 300 |
| Wafer Diameter (mm) |
50.8±0.3 |
100±0.3 |
| Thickness (µm) |
175±25 |
175±25 |
| TTV [P/P] (µm) |
≤ 15 |
≤ 15 |
| WARP (µm) |
≤ 25 |
≤ 25 |
| IF* (mm) |
17±1 |
32.5±1 |
| OF (mm) |
7±1 |
18±1 |
| Polish** |
E/E, P/E, P/G |
E/E, P/E, P/G |
| Backside Ra (µm)*** |
< 0.1 |
< 0.1 |
*If needed by customer
**E=Etched, P=Polished, G=Ground
***Ra=Average Service Roughness
3" AND 6" wafers available upon request
Note: Other Specifications maybe available upon request
|
