Undoped GaAs
Submitted by drupaladmin on Sat, 2008-03-01 00:20.
Semi-Insulating GaAs Specifications
| Growth Method |
VGF |
| Dopant |
Carbon |
| Wafer Shape* |
Round (DIA: 2", 3", 4", and 6") |
| Surface Orientation** |
(100)±0.5° |
*5" Wafers available upon request
**Other Orientations maybe available upon request
| Resistivity (Ω.cm) |
≥ 1 × 107 |
≥ 1 × 108 |
| Mobility (cm2/V.S) |
≥ 5,000 |
≥ 4,000 |
| Etch Pitch Density (cm2) |
1,500-5,000 |
1,500-5,000 |
| Wafer Diameter (mm) |
50.8±0.3 |
76.2±0.3 |
100±0.3 |
150±0.3 |
| Thickness (µm) |
350±25 |
625±25 |
625±25 |
675±25 |
| TTV [P/P] (µm) |
≤ 4 |
≤ 4 |
≤ 4 |
≤ 4 |
| TTV [P/E] (µm) |
≤ 10 |
≤ 10 |
≤ 10 |
≤ 10 |
| WARP (µm) |
≤ 10 |
≤ 10 |
≤ 10 |
≤ 15 |
| OF (mm) |
17±1 |
22±1 |
32.5±1 |
NOTCH |
| OF / IF (mm) |
7±1 |
12±1 |
18±1 |
N/A |
| Polish* |
E/E, P/E, P/P |
E/E, P/E, P/P |
E/E, P/E, P/P |
E/E, P/E, P/P |
*E=Etched, P=Polished
Note: Other Specifications maybe available upon request
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