Submitted by drupaladmin on Sat, 2008-03-01 00:26.
PBN Crucibles for VGF
Available from 2" in diameter to 6" in diameter
Height from 7" to 10"
PBN Crucibles for LEC
Available from 3" in diameter to 8" in diameter
Submitted by drupaladmin on Sat, 2008-03-01 00:25.
Semi-conducting Ge Specifications
Growth Method |
VGF |
Dopant |
n-type: As; p-type: Ga |
Wafer Shape |
Round (DIA: 2" TO 6") |
Surface Orientation** |
(100)±0.5° |
**Other Orientations maybe available upon request
Submitted by drupaladmin on Sat, 2008-03-01 00:22.
Purity Levels |
4N |
6N |
7N |
MBE Grade - 8N |
99.99% |
99.9999% |
99.99999% |
99.999999% Plus |
Total Impurities |
<50ppm |
<500ppb |
<50ppb |
<10ppb |
Critical Elements |
Cu |
<10ppm |
<0.5ppb |
<0.5ppb |
<0.5ppb |
Zn |
<5ppm |
<3.0ppb |
<1.0ppb |
<1.0ppb |
Cd |
<5ppm |
<0.5ppb |
<0.5ppb |
<0.5ppb |
Si |
<2ppm |
<1.0ppb |
<0.5ppb |
<0.5ppb |
Fe |
<5ppm |
<0.1ppb |
<0.1ppb |
<0.1ppb |
Al |
<5ppm |
<0.2ppb |
<0.2ppb |
<0.2ppb |
Ca |
<5ppm |
<5ppb |
<5.0ppb |
<5.0ppb |
Na |
<5ppm |
<0.2ppb |
<0.2ppb |
<0.2ppb |
Pb |
<10ppm |
<0.5ppb |
<0.5ppb |
<0.5ppb |
In |
<10ppm |
<1.0ppb |
<0.5ppb |
<0.5ppb |
Analysis Method: Glow Discharge Mass Spectroscopy (GDMS)
Submitted by drupaladmin on Sat, 2008-03-01 00:20.
Semi-Insulating GaAs Specifications
Growth Method |
VGF |
Dopant |
Carbon |
Wafer Shape* |
Round (DIA: 2", 3", 4", and 6") |
Surface Orientation** |
(100)±0.5° |
*5" Wafers available upon request
Submitted by drupaladmin on Sat, 2008-03-01 00:16.
Semi-conducting GaAs Specifications
Growth Method |
VGF |
Dopant |
Si (n-type) AND Zn (p-type) |
Wafer Shape |
Round (DIA: 2", 3", 4" and 6") |
Surface Orientation* |
(100)±0.5° |
*Other Orientations maybe available upon request
Submitted by drupaladmin on Sat, 2008-03-01 00:11.
Semi-conducting InP Specifications
Growth Method |
VGF |
Dopant |
n-type: S, Sn AND Undoped; p-type: Zn |
Wafer Shape |
Round (DIA: 2", 3", AND 4") |
Surface Orientation |
(100)±0.5° |
*Other Orientations maybe available upon request
Submitted by drupaladmin on Fri, 2008-02-29 20:10.
Semi-Insulating InP Specifications
Growth Method |
VGF |
Dopant |
Iron (FE) |
Wafer Shape |
Round (DIA: 2", 3", AND 4") |
Surface Orientation |
(100)±0.5° |
*Other Orientations maybe available upon request
Submitted by drupaladmin on Fri, 2008-02-15 18:56.
Ge Substrates |
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Submitted by drupaladmin on Fri, 2007-01-12 18:58.
Submitted by drupaladmin on Mon, 2006-08-07 21:43.
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